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FDAF75N28 280V N-Channel MOSFET
October 2006
FDAF75N28
280V N-Channel MOSFET
Features
* 46A, 280V, RDS(on) = 0.041 @VGS = 10 V * Low gate charge ( typical 111 nC) * Low Crss ( typical 90 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-3PF
FDAF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDAF75N28
280 46 28 184 30 3080 46 21.5 4.5 215 1.72 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min.
---
Max.
0.58 40
Unit
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FDAF75N28 Rev. A
FDAF75N28 280V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDAF75N28
Device
FDAF75N28
Package
TO-3PF
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 280V, VGS = 0V VDS = 224V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 23A VDS = 40V, ID = 23A
(Note 4)
Min
280 ------
Typ
-0.28 -----
Max Units
--1 10 100 -100 V V/C A A nA nA
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.035 75 5.0 0.041 -V S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ---5040 915 90 6700 1215 135 pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
(Note 4, 5)
-VDD = 140V,ID = 75A RG =25 ----VDS = 224V, ID = 75A VGS = 10V
(Note 4, 5)
105 580 190 310 111 31 49
146 538 418 262 144 ---
ns ns ns ns nC nC nC
Total Gate Charge Gate-Source Charge Gate-Drain Charge
---
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.4mH, IAS = 46A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 46A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 46A VGS = 0V, IS = 75A dIF/dt =100A/s
(Note 4)
------
---320 3.5
75 300 1.4 ---
A A V ns C
2 FDAF75N28 Rev. A
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FDAF75N28 280V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
VGS
10
2
ID, Drain Current [A]
ID, Drain Current [A]
15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
Top :
10
2
150 C
10
1
o
10
1
25 C -55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o
o
* Notes : 1. 250s Pulse Test
10
0
2. TC = 25 C
-1
o
10
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.09
200
RDS(ON) [], Drain-Source On-Resistance
0.08
IDR, Reverse Drain Current (A)
100
150 C
o
0.07
VGS = 10V
0.06
10
0.05
VGS = 20V
25 C
o
0.04
* Note : TJ = 25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
0.03 0 25 50 75 100 125 150 175 200 225 250
1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage (V)
Figure 5. Capacitance Characteristics
10000
Figure 6. Gate Charge Characteristics
12
Coss
8000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VGS, Gate-Source Voltage (V)
10
VDS = 56V VDS = 140V VDS = 224V
Ciss
Capacitances (pF)
8
6000
6
4000
Crss
2000
* Note ; 1. VGS = 0 V 2. f = 1 MHz
4
2
* Note : ID = 75A
0 -1 10
10
0
10
1
50
0 0 20 40 60 80 100 120
VDS, Drain-Source Voltage (V)
QG, Total Gate Charge (nC)
3 FDAF75N28 Rev. A
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FDAF75N28 280V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
rDS(on), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
* Notes : 1. VGS = 10 V 2. ID = 23 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature ( C)
TJ, Junction Temperature ( C)
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
3
50
10
2
ID, Drain Current [A]
10
1
Operation in This Area is Limited by R DS(on)
10 ms 100 ms DC
ID, Drain Current (A)
10 s 100 s 1 ms
40
30
10
0
20
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
10
-2
10
0
10
1
10
2
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature ( C)
Figure 11. Transient Thermal Response Curve
D = 0 .5
(t), Thermal Response
10
-1
0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1
* N o te s : 1 . Z J C ( t) = 0 .5 8
o
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
10
-2
JC
PDM
s in g le p u ls e
Z
t1 t2
10
-3
10
-5
10
-4
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
4 FDAF75N28 Rev. A
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FDAF75N28 280V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 FDAF75N28 Rev. A
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FDAF75N28 280V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6 FDAF75N28 Rev. A
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FDAF75N28 280V N-Channel MOSFET
Mechanical Dimensions
TO-3PF
5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50)
10.00 0.20
10
26.50 0.20
23.00 0.20
16.50 0.20
14.50 0.20
0.85 0.03 16.50 0.20 2.00 0.20 1.50 0.20
14.80 0.20
2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10
+0.20
2.00 0.20
2.50 0.20
2.00 0.20
3.30 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.90 -0.10
+0.20
3.30 0.20
2.00 0.20
5.50 0.20
Dimensions in Millimeters
7 FDAF75N28 Rev. A
22.00 0.20
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FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM UltraFET(R) VCXTM WireTM
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I21

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